Comparison of NPN transistors fabricated with broad beam and spatial profiling using focused beam ion implantation.

MLA

Chu, S. D., et al. “Comparison of NPN Transistors Fabricated with Broad Beam and Spatial Profiling Using Focused Beam Ion Implantation.” Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena, vol. 4, no. 1, Jan. 1986, pp. 375–79. EBSCOhost, https://doi.org/10.1116/1.583335.

APA

Chu, S. D., Corelli, J. C., Steckl, A. J., Reuss, R. H., Clark, W. M., Rensch, D. B., & Morris, W. G. (1986). Comparison of NPN transistors fabricated with broad beam and spatial profiling using focused beam ion implantation. Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena, 4(1), 375–379. https://doi.org/10.1116/1.583335

Chicago

Chu, S. D., J. C. Corelli, A. J. Steckl, R. H. Reuss, W. M. Clark, D. B. Rensch, and W. G. Morris. 1986. “Comparison of NPN Transistors Fabricated with Broad Beam and Spatial Profiling Using Focused Beam Ion Implantation.” Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena 4 (1): 375–79. doi:10.1116/1.583335.