Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs which Contain High-Resistivity Regions.

Details

Language :

English

ISSN :

00218979

Volume :

42

Issue :

2

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

73384636

Full Text :

https://doi.org/10.1063/1.1660088