Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs which Contain High-Resistivity Regions.

MLA

DiLorenzo, J. V., et al. “Analysis of Impurity Distribution in Homoepitaxial n on N+ Films of GaAs Which Contain High-Resistivity Regions.” Journal of Applied Physics, vol. 42, no. 2, Feb. 1971, pp. 729–39. EBSCOhost, https://doi.org/10.1063/1.1660088.

APA

DiLorenzo, J. V., Marcus, R. B., & Lewis, R. (1971). Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs which Contain High-Resistivity Regions. Journal of Applied Physics, 42(2), 729–739. https://doi.org/10.1063/1.1660088

Chicago

DiLorenzo, J. V., R. B. Marcus, and R. Lewis. 1971. “Analysis of Impurity Distribution in Homoepitaxial n on N+ Films of GaAs Which Contain High-Resistivity Regions.” Journal of Applied Physics 42 (2): 729–39. doi:10.1063/1.1660088.