Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing.

Details

Language :

English

ISSN :

00218979

Volume :

52

Issue :

2

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72867719

Full Text :

https://doi.org/10.1063/1.328756