Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing.

MLA

Sadana, D. K., et al. “Transmission Electron Microscopy and Rutherford Backscattering Studies of Single and Double Discrete Buried Damage Layers in P+ Implanted Si on Subsequent Laser Annealing.” Journal of Applied Physics, vol. 52, no. 2, Feb. 1981, pp. 744–47. EBSCOhost, https://doi.org/10.1063/1.328756.

APA

Sadana, D. K., Strathman, M., Washburn, J., & Booker, G. R. (1981). Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing. Journal of Applied Physics, 52(2), 744–747. https://doi.org/10.1063/1.328756

Chicago

Sadana, D. K., M. Strathman, J. Washburn, and G. R. Booker. 1981. “Transmission Electron Microscopy and Rutherford Backscattering Studies of Single and Double Discrete Buried Damage Layers in P+ Implanted Si on Subsequent Laser Annealing.” Journal of Applied Physics 52 (2): 744–47. doi:10.1063/1.328756.