The inverted horizontal reactor: Growth of uniform InP and GaInAs by LPMOCVD.

The uniformity of InP and GalnAs lattice matched to InP has been studied for three different types of horizontal reactors. Employing the conventional approach, i.e. the susceptor is positioned in the centre or at the bottom of the reactor cell with the wafer surface facing upward, the uniformity in film thickness and ternary composition perpendicular to the direction of gas flow could be substantially improved by using an obstacle which spreads the incoming gas over the entire width of the reactor. In the direction of flow however, a compositional grading of the GalnAs films was observed. This gradient could be avoided by using a novel design in which the substrate is located at the highest and hottest point of the reaction cell and facing downwards. [ABSTRACT FROM AUTHOR]