Thickness and composition monitoring of thin layers of InGaAs in InP/InGaAsP epitaxial growths using FESEM and integrated SIMS profiles.

Details

Language :

English

ISSN :

0277786X

Issue :

1

Database :

Complementary Index

Journal :

Proceedings of SPIE

Publication Type :

Conference

Accession number :

65896222

Full Text :

https://doi.org/10.1117/12.543725