Thickness and composition monitoring of thin layers of InGaAs in InP/InGaAsP epitaxial growths using FESEM and integrated SIMS profiles.

MLA

Masson, Denis P., et al. “Thickness and Composition Monitoring of Thin Layers of InGaAs in InP/InGaAsP Epitaxial Growths Using FESEM and Integrated SIMS Profiles.” Proceedings of SPIE, no. 1, Nov. 2003, pp. 463–69. EBSCOhost, https://doi.org/10.1117/12.543725.

APA

Masson, D. P., Humphreys, B., & Robertson, M. (2003). Thickness and composition monitoring of thin layers of InGaAs in InP/InGaAsP epitaxial growths using FESEM and integrated SIMS profiles. Proceedings of SPIE, 1, 463–469. https://doi.org/10.1117/12.543725

Chicago

Masson, Denis P., Bedwyr Humphreys, and Michael Robertson. 2003. “Thickness and Composition Monitoring of Thin Layers of InGaAs in InP/InGaAsP Epitaxial Growths Using FESEM and Integrated SIMS Profiles.” Proceedings of SPIE, no. 1 (November): 463–69. doi:10.1117/12.543725.