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Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy.
- Source :
- Physica Status Solidi (B); Oct2004, Vol. 241 Issue 12, p2811-2815, 5p
- Publication Year :
- 2004
Details
- Language :
- English
- ISSN :
- 03701972
- Volume :
- 241
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (B)
- Publication Type :
- Academic Journal
- Accession number :
- 62453600
- Full Text :
- https://doi.org/10.1002/pssb.200405068