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Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy.

Authors :
Kim, J. S.
Kim, E. K.
Kim, H. J.
Yoon, E.
Park, I.-W.
Park, Y. J.
Source :
Physica Status Solidi (B); Oct2004, Vol. 241 Issue 12, p2811-2815, 5p
Publication Year :
2004

Details

Language :
English
ISSN :
03701972
Volume :
241
Issue :
12
Database :
Complementary Index
Journal :
Physica Status Solidi (B)
Publication Type :
Academic Journal
Accession number :
62453600
Full Text :
https://doi.org/10.1002/pssb.200405068