Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy.

MLA

Kim, J. S., et al. “Electrical Characterization of InGaN/GaN Quantum Dots by Deep Level Transient Spectroscopy.” Physica Status Solidi (B), vol. 241, no. 12, Oct. 2004, pp. 2811–15. EBSCOhost, https://doi.org/10.1002/pssb.200405068.

APA

Kim, J. S., Kim, E. K., Kim, H. J., Yoon, E., Park, I.-W., & Park, Y. J. (2004). Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy. Physica Status Solidi (B), 241(12), 2811–2815. https://doi.org/10.1002/pssb.200405068

Chicago

Kim, J. S., E. K. Kim, H. J. Kim, E. Yoon, I.-W. Park, and Y. J. Park. 2004. “Electrical Characterization of InGaN/GaN Quantum Dots by Deep Level Transient Spectroscopy.” Physica Status Solidi (B) 241 (12): 2811–15. doi:10.1002/pssb.200405068.