The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods.

Details

Language :

English

ISSN :

02321300

Volume :

20

Issue :

10

Database :

Complementary Index

Journal :

Crystal Research & Technology

Publication Type :

Academic Journal

Accession number :

62216111

Full Text :

https://doi.org/10.1002/crat.2170201014