The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods.

MLA

Bagraev, N. T., et al. “The Study of the Influence of Deep Level Defects on GaAs Epilayer Electrophysical Parameters with Electron Beam and Photoelectron Paramagnetic Resonance Methods.” Crystal Research & Technology, vol. 20, no. 10, Oct. 1985, pp. 1387–91. EBSCOhost, https://doi.org/10.1002/crat.2170201014.

APA

Bagraev, N. T., Konnikov, S. G., Raitsin, A. B., & Sobolev, M. M. (1985). The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods. Crystal Research & Technology, 20(10), 1387–1391. https://doi.org/10.1002/crat.2170201014

Chicago

Bagraev, N. T., S. G. Konnikov, A. B. Raitsin, and M. M. Sobolev. 1985. “The Study of the Influence of Deep Level Defects on GaAs Epilayer Electrophysical Parameters with Electron Beam and Photoelectron Paramagnetic Resonance Methods.” Crystal Research & Technology 20 (10): 1387–91. doi:10.1002/crat.2170201014.