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Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation.
- Source :
- Applied Physics Letters; 2/7/2011, Vol. 98 Issue 6, p062108, 3p
- Publication Year :
- 2011
-
Abstract
- The pronounced high interfacial densities of states (D<subscript>it</subscript>) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive D<subscript>it</subscript> spectra as the function of energy [D<subscript>it</subscript>(E)] inside the In<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga<subscript>2</subscript>O<subscript>3</subscript>(Gd<subscript>2</subscript>O<subscript>3</subscript>)/In<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As and atomic-layer-deposited (ALD)-Al<subscript>2</subscript>O<subscript>3</subscript>/In<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As metal-oxide-semiconductor capacitors. Unlike the ALD-Al<subscript>2</subscript>O<subscript>3</subscript>/In<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As interface giving a D<subscript>it</subscript> spectrum with a high midgap D<subscript>it</subscript> peak, the UHV-Ga<subscript>2</subscript>O<subscript>3</subscript>(Gd<subscript>2</subscript>O<subscript>3</subscript>)/In<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As interface shows a D<subscript>it</subscript> spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 98
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 58044745
- Full Text :
- https://doi.org/10.1063/1.3554375