Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation.

MLA

Lin, C. A., et al. “Attainment of Low Interfacial Trap Density Absent of a Large Midgap Peak in In0.2Ga0.8As by Ga2O3(Gd2O3) Passivation.” Applied Physics Letters, vol. 98, no. 6, Feb. 2011, p. 062108. EBSCOhost, https://doi.org/10.1063/1.3554375.

APA

Lin, C. A., Chiu, H. C., Chiang, T. H., Lin, T. D., Chang, Y. H., Chang, W. H., Chang, Y. C., Wang, W.-E., Dekoster, J., Hoffmann, T. Y., Hong, M., & Kow, J. (2011). Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation. Applied Physics Letters, 98(6), 062108. https://doi.org/10.1063/1.3554375

Chicago

Lin, C. A., H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, et al. 2011. “Attainment of Low Interfacial Trap Density Absent of a Large Midgap Peak in In0.2Ga0.8As by Ga2O3(Gd2O3) Passivation.” Applied Physics Letters 98 (6): 062108. doi:10.1063/1.3554375.