Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).

Zinc incorporation by post-growth metalorganic vapor phase diffusion (MOVPD) is used to achieve high p-doping, which is desirable for the fabrication of photodiodes. Diethylzinc (DEZ) is used as precursor and Zn is diffused into InP and InAs_0.6P epitaxial layers grown by low pressure metalorganic vapor phase epitaxy (MOVPE) on different substrate orientations, enabling the investigation of the dislocation density on the Zn incorporation. Diffusion depths are measured using cleave-and-stain techniques, resistivity measurements, electrochemical profiling, and secondary ion mass spectroscopy. High hole concentrations of, respectively, 1.7 10¹⁹ and 6 10¹⁸ cm⁻³, are obtained for, respectively, InAs_0.60P and InP. The diffusion coefficients are derived and the Zn diffusion is used for the fabrication of lattice-mismatched planar PIN InAsP/InGaAs photodiodes. [ABSTRACT FROM AUTHOR]