Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).

MLA

Vanhollebeke, K., et al. “Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures through Metalorganic Vapor Phase Diffusion (MOVPD).” Journal of Electronic Materials, vol. 30, no. 8, Aug. 2001, pp. 951–59. EBSCOhost, https://doi.org/10.1007/BF02657716.

APA

Vanhollebeke, K., D’Hondt, M., Moerman, I., Daele, P., & Demeester, P. (2001). Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD). Journal of Electronic Materials, 30(8), 951–959. https://doi.org/10.1007/BF02657716

Chicago

Vanhollebeke, K., M. D’Hondt, I. Moerman, P. Daele, and P. Demeester. 2001. “Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures through Metalorganic Vapor Phase Diffusion (MOVPD).” Journal of Electronic Materials 30 (8): 951–59. doi:10.1007/BF02657716.