Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors.

The morphology of a hydrogenated Si(310) surface annealed in As₄ vapors is studied by fast electron diffraction and scanning tunneling microscopy. It is established that, at annealing temperatures above 700°C, the surface morphology is changed; namely, (311) facets and steps with heights equal to several interplanar distances are formed. At temperatures below 600°C, there is no surface faceting and the height of steps is equal to two interplanar distances. This makes this surface suitable for growing A²B⁶-based heterostructures. [ABSTRACT FROM AUTHOR]