Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors.

MLA

Yakushev, M., et al. “Surface Morphology of a Si(310) Substrate Used for Molecular Beam Epitaxy of CdHgTe: II. Si(310) Surface Annealed in As4 Vapors.” Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, vol. 2, no. 3, June 2008, pp. 433–39. EBSCOhost, https://doi.org/10.1134/S1027451008030208.

APA

Yakushev, M., Brunev, D., Romanyuk, K., & Sidorov, Y. (2008). Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors. Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2(3), 433–439. https://doi.org/10.1134/S1027451008030208

Chicago

Yakushev, M., D. Brunev, K. Romanyuk, and Yu. Sidorov. 2008. “Surface Morphology of a Si(310) Substrate Used for Molecular Beam Epitaxy of CdHgTe: II. Si(310) Surface Annealed in As4 Vapors.” Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques 2 (3): 433–39. doi:10.1134/S1027451008030208.