Novel wide band gap alloyed semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and fabrication of their thin films.

Oxide semiconductor alloys of x(LiGaO₂)_1/2-(1− x)ZnO were fabricated by the solid state reaction between β-LiGaO₂ and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x⩽0.38. The formation range of the alloys was wider than that of the (Mg_{1− x} Zn _x )O system, because the β-LiGaO₂ possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO₂)_1/2-0.62ZnO alloyed ceramic were 0.45 Ωcm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO₂)_1/2-(1− x)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO₂)_1/2-0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Ωcm, 3.4×10¹⁷ cm⁻³ and 5.6 cm² V⁻¹ s⁻¹, respectively. [ABSTRACT FROM AUTHOR]