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Novel wide band gap alloyed semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and fabrication of their thin films.
- Source :
- Science in China. Series E: Technological Sciences; Jan2009, Vol. 52 Issue 1, p111-115, 5p
- Publication Year :
- 2009
-
Abstract
- Oxide semiconductor alloys of x(LiGaO<subscript>2</subscript>)<subscript>1/2</subscript>-(1− x)ZnO were fabricated by the solid state reaction between β-LiGaO<subscript>2</subscript> and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x⩽0.38. The formation range of the alloys was wider than that of the (Mg<subscript>1− x </subscript>Zn<subscript> x </subscript>)O system, because the β-LiGaO<subscript>2</subscript> possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO<subscript>2</subscript>)<subscript>1/2</subscript>-0.62ZnO alloyed ceramic were 0.45 Ωcm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO<subscript>2</subscript>)<subscript>1/2</subscript>-(1− x)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO<subscript>2</subscript>)<subscript>1/2</subscript>-0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Ωcm, 3.4×10<superscript>17</superscript> cm<superscript>−3</superscript> and 5.6 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript>, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10069321
- Volume :
- 52
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Science in China. Series E: Technological Sciences
- Publication Type :
- Academic Journal
- Accession number :
- 49465721
- Full Text :
- https://doi.org/10.1007/s11431-008-0335-y