Novel wide band gap alloyed semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and fabrication of their thin films.

MLA

Omata, T., et al. “Novel Wide Band Gap Alloyed Semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and Fabrication of Their Thin Films.” Science in China. Series E: Technological Sciences, vol. 52, no. 1, Jan. 2009, pp. 111–15. EBSCOhost, https://doi.org/10.1007/s11431-008-0335-y.

APA

Omata, T., Tanaka, K., Tazuke, A., Nose, K., & Otsuka-Yao-Matsuo, S. (2009). Novel wide band gap alloyed semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and fabrication of their thin films. Science in China. Series E: Technological Sciences, 52(1), 111–115. https://doi.org/10.1007/s11431-008-0335-y

Chicago

Omata, T., K. Tanaka, A. Tazuke, K. Nose, and S. Otsuka-Yao-Matsuo. 2009. “Novel Wide Band Gap Alloyed Semiconductors, x(LiGaO2)1/2-(1− x)ZnO, and Fabrication of Their Thin Films.” Science in China. Series E: Technological Sciences 52 (1): 111–15. doi:10.1007/s11431-008-0335-y.