Comparison Of Several Metrology Techniques For In-line Process Monitoring Of Porous SiOCH.

As porous SiOCH is a widely used inter-metal dielectric for 65 nm nodes and below, the control of its elaboration process by in-line monitoring is necessary to guarantee successful integration of the material. In this paper, the sensitivities of several non-destructive metrology techniques towards the film elaboration process drifts are investigated. It appears that the two steps of the process should be monitored separately and that corona charge method is the most sensitive technique of the review for this application. [ABSTRACT FROM AUTHOR]