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Outstanding Meeting Paper/Article: High-resolution x-ray topography of dislocations in 4H-SiC epilayers.

Authors :
Kamata, Isaho
Tsuchida, Hidekazu
Vetter, William M.
Dudley, Michael
Source :
Journal of Materials Research; Apr2007, Vol. 22 Issue 4, p28-28, 1p
Publication Year :
2007

Abstract

Synchrotron x-ray topography with a high-resolution setup using 11<superscript>-</superscript><subscript>2</subscript>8 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08842914
Volume :
22
Issue :
4
Database :
Complementary Index
Journal :
Journal of Materials Research
Publication Type :
Academic Journal
Accession number :
25340050
Full Text :
https://doi.org/10.1557/JMR.2007.0132