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Outstanding Meeting Paper/Article: High-resolution x-ray topography of dislocations in 4H-SiC epilayers.
- Source :
- Journal of Materials Research; Apr2007, Vol. 22 Issue 4, p28-28, 1p
- Publication Year :
- 2007
-
Abstract
- Synchrotron x-ray topography with a high-resolution setup using 11<superscript>-</superscript><subscript>2</subscript>8 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08842914
- Volume :
- 22
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Materials Research
- Publication Type :
- Academic Journal
- Accession number :
- 25340050
- Full Text :
- https://doi.org/10.1557/JMR.2007.0132