Cite
Outstanding Meeting Paper/Article: High-resolution x-ray topography of dislocations in 4H-SiC epilayers.
MLA
Kamata, Isaho, et al. “Outstanding Meeting Paper/Article: High-Resolution x-Ray Topography of Dislocations in 4H-SiC Epilayers.” Journal of Materials Research, vol. 22, no. 4, Apr. 2007, p. 28. EBSCOhost, https://doi.org/10.1557/JMR.2007.0132.
APA
Kamata, I., Tsuchida, H., Vetter, W. M., & Dudley, M. (2007). Outstanding Meeting Paper/Article: High-resolution x-ray topography of dislocations in 4H-SiC epilayers. Journal of Materials Research, 22(4), 28. https://doi.org/10.1557/JMR.2007.0132
Chicago
Kamata, Isaho, Hidekazu Tsuchida, William M. Vetter, and Michael Dudley. 2007. “Outstanding Meeting Paper/Article: High-Resolution x-Ray Topography of Dislocations in 4H-SiC Epilayers.” Journal of Materials Research 22 (4): 28. doi:10.1557/JMR.2007.0132.