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Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions.
- Source :
- Journal of Applied Physics; 10/1/1997, Vol. 82 Issue 7, p3552, 8p, 2 Diagrams, 1 Chart, 12 Graphs
- Publication Year :
- 1997
-
Abstract
- Reports on the results from the molecular dynamics simulation of the etching of a Si surface by energetic Cl atoms. Energy dependence of the Si yield; Variation of Si yield with the impact angle of incidence; Stoichiometry of desorbed materials; Effect of a thermal background Cl flux to the surface.
- Subjects :
- MOLECULAR dynamics
SILICON
SIMULATION methods & models
ETCHING
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 25309
- Full Text :
- https://doi.org/10.1063/1.365674