Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions.

MLA

Hanson, D. E., et al. “Molecular Dynamics Simulation of Reactive Ion Etching of Si by Energetic Cl Ions.” Journal of Applied Physics, vol. 82, no. 7, Oct. 1997, p. 3552. EBSCOhost, https://doi.org/10.1063/1.365674.

APA

Hanson, D. E., Voter, A. F., & Kress, J. D. (1997). Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions. Journal of Applied Physics, 82(7), 3552. https://doi.org/10.1063/1.365674

Chicago

Hanson, D.E., A.F. Voter, and J. D. Kress. 1997. “Molecular Dynamics Simulation of Reactive Ion Etching of Si by Energetic Cl Ions.” Journal of Applied Physics 82 (7): 3552. doi:10.1063/1.365674.