A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode.

In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm. [ABSTRACT FROM AUTHOR]