A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode.

MLA

Wang, Chenlu, et al. “A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode.” Electronics (2079-9292), vol. 13, no. 14, July 2024, p. 2786. EBSCOhost, https://doi.org/10.3390/electronics13142786.

APA

Wang, C., Luo, J., Zhang, Z., Gu, C., Zhu, H., & Zhang, L. (2024). A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode. Electronics (2079-9292), 13(14), 2786. https://doi.org/10.3390/electronics13142786

Chicago

Wang, Chenlu, Junyi Luo, Zhiwei Zhang, Chao Gu, Haipeng Zhu, and Luyu Zhang. 2024. “A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode.” Electronics (2079-9292) 13 (14): 2786. doi:10.3390/electronics13142786.