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Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.
- Source :
- Micromachines; Apr2024, Vol. 15 Issue 4, p512, 10p
- Publication Year :
- 2024
-
Abstract
- In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µ<subscript>FE</subscript>) and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS). A conduction band offset (∆E<subscript>C</subscript>) of 0.5 eV is observed in the ITO/a-IGZO heterojunction, resulting in electron accumulation in the formed potential well. Meanwhile, the ∆E<subscript>C</subscript> of the ITO/a-IGZO heterojunction can be modulated by nitrogen doping ITO (ITON), which can affect the carrier confinement and transport properties at the ITO/a-IGZO heterojunction interface. Moreover, the carrier concentration distribution at the ITO/a-IGZO heterointerface is extracted by means of TCAD silvaco 2018 simulation, which is beneficial for enhancing the electrical performance of ITO/a-IGZO heterojunction TFTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 15
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 176905505
- Full Text :
- https://doi.org/10.3390/mi15040512