Cite
Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.
MLA
Huang, Xiaoming, et al. “Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.” Micromachines, vol. 15, no. 4, Apr. 2024, p. 512. EBSCOhost, https://doi.org/10.3390/mi15040512.
APA
Huang, X., Chen, C., Sun, F., Chen, X., Xu, W., & Li, L. (2024). Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure. Micromachines, 15(4), 512. https://doi.org/10.3390/mi15040512
Chicago
Huang, Xiaoming, Chen Chen, Fei Sun, Xinlei Chen, Weizong Xu, and Lin Li. 2024. “Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.” Micromachines 15 (4): 512. doi:10.3390/mi15040512.