Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping.

The 1.7 kV 4H-SiC MOSFET which features optimized retrograded-profile ion implantation in the JFET regions (RG-MOS) is proposed and fabricated on the 4 inch wafers. The measured results quantify the benefits of the RG-MOS structure: simultaneous improvement in high-frequency figures of merit (HF-FOM) (R _on× C _GD) by 1.5×, HF-FOM (R _on × Q _GD) by 1.5× and Baliga figure of merit (BFOM = 4BV²/ R _on,sp) by 1.6× compared with the conventional MOSFET (CON-MOS). Unlike other reported complicated structures which need high-precise fabricating process, the proposed RG-MOS structure is compatible with the prior planar 4H-SiC MOSFET process, and is favorable for large-scale production. [ABSTRACT FROM AUTHOR]