Cite
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping.
MLA
Wang, Qian, et al. “Simultaneous Improvement of High-Frequency and Baliga Figures of Merit of 1.7 KV 4H-SiC MOSFET with Retrograded JFET Doping.” Journal of Physics D: Applied Physics, vol. 57, no. 25, June 2024, pp. 1–6. EBSCOhost, https://doi.org/10.1088/1361-6463/ad32a8.
APA
Wang, Q., Hua, H., Zheng, L., Feng, J., Zhang, C., Gao, M., Qiu, K., Luo, J., & Cheng, X. (2024). Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping. Journal of Physics D: Applied Physics, 57(25), 1–6. https://doi.org/10.1088/1361-6463/ad32a8
Chicago
Wang, Qian, Hao Hua, Li Zheng, Junhong Feng, Cheng Zhang, Mingyang Gao, Kun Qiu, Jian Luo, and Xinhong Cheng. 2024. “Simultaneous Improvement of High-Frequency and Baliga Figures of Merit of 1.7 KV 4H-SiC MOSFET with Retrograded JFET Doping.” Journal of Physics D: Applied Physics 57 (25): 1–6. doi:10.1088/1361-6463/ad32a8.