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ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy.
- Source :
- IEEE Transactions on Electron Devices; Sep2022, Vol. 69 Issue 9, p5357-5362, 6p
- Publication Year :
- 2022
-
Abstract
- In this work, the electrostatic discharge (ESD) reliability of the OFF- and ON-state NMOS field-effect transistors in a bulk FinFET technology are investigated. The impacts of source and drain epitaxy influenced by the gate pitch (GP) and the gate length (${L}_{g}$) are studied. In the OFF-state NMOSFET, which is known as grounded-gate NMOS (ggNMOS), the large GP introduces nonuniform epitaxy on source and drain, which cause high power density localization in device. The large ${L}_{g}$ effectively helps the ESD performance of ggNMOS in ways of better turn-on and contact current uniformity. The ON-state NMOSFET as an active power-rail clamp is also studied in 3-D TCAD simulations. The device shows little difference to transient responses, while the clamping voltage can be different with ${L}_{g}$ and GPs. With the same gate space, the short ${L}_{g}$ device has a lower clamping voltage and ON-resistance, which reduces oxide breakdown risk and achieves better ESD performance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 159195047
- Full Text :
- https://doi.org/10.1109/TED.2022.3190822