Cite
ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy.
MLA
Chen, Wen-Chieh, et al. “ESD NMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy.” IEEE Transactions on Electron Devices, vol. 69, no. 9, Sept. 2022, pp. 5357–62. EBSCOhost, https://doi.org/10.1109/TED.2022.3190822.
APA
Chen, W.-C., Chen, S.-H., Chiarella, T., Hellings, G., Linten, D., & Groeseneken, G. (2022). ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy. IEEE Transactions on Electron Devices, 69(9), 5357–5362. https://doi.org/10.1109/TED.2022.3190822
Chicago
Chen, Wen-Chieh, Shih-Hung Chen, Thomas Chiarella, Geert Hellings, Dimitri Linten, and Guido Groeseneken. 2022. “ESD NMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy.” IEEE Transactions on Electron Devices 69 (9): 5357–62. doi:10.1109/TED.2022.3190822.