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Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching.

Authors :
Zhou, Xue
Hu, Zeyu
Chai, Zheng
Zhang, Weidong
Clima, Sergiu
Degraeve, Robin
Zhang, Jian Fu
Fantini, Andrea
Garbin, Daniele
Delhougne, Romain
Goux, Ludovic
Kar, Gouri Sankar
Source :
IEEE Electron Device Letters; Jul2022, Vol. 43 Issue 7, p1061-1064, 4p
Publication Year :
2022

Abstract

Volatile Ovonic threshold switching (OTS) are promising not only as the selector in crossbar resistive switching memory arrays, but also as true random number generators (TRNG) by utilizing its probabilistic switching characteristics. However, investigation on the reliability of OTS-based TRNG is still lacking, which hinders its practical application. Previously, we found that switching probability is dependent on the pulse amplitude and width. In this work, we report that relaxation which happens during the time interval between pulses can also cause switching probability drift. Optimizing the bit-generation waveform and modulating the pulse conditions could provide a practical solution, in addition to the impact of external bias and temperature. This work provides useful guidance for the practical design and operation of OTS-based TRNGs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
43
Issue :
7
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
157765518
Full Text :
https://doi.org/10.1109/LED.2022.3179590