Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching.

MLA

Zhou, Xue, et al. “Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching.” IEEE Electron Device Letters, vol. 43, no. 7, July 2022, pp. 1061–64. EBSCOhost, https://doi.org/10.1109/LED.2022.3179590.

APA

Zhou, X., Hu, Z., Chai, Z., Zhang, W., Clima, S., Degraeve, R., Zhang, J. F., Fantini, A., Garbin, D., Delhougne, R., Goux, L., & Kar, G. S. (2022). Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching. IEEE Electron Device Letters, 43(7), 1061–1064. https://doi.org/10.1109/LED.2022.3179590

Chicago

Zhou, Xue, Zeyu Hu, Zheng Chai, Weidong Zhang, Sergiu Clima, Robin Degraeve, Jian Fu Zhang, et al. 2022. “Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching.” IEEE Electron Device Letters 43 (7): 1061–64. doi:10.1109/LED.2022.3179590.