Back to Search Start Over

Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon.

Authors :
Egamberdiev, B. E.
Mallayev, A. S.
Sayfulloev, Sh. A.
Rahmatov, M. I.
Source :
AIP Conference Proceedings; 2021, Vol. 2402 Issue 1, p1-6, 6p
Publication Year :
2021

Abstract

This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distribution of iron and other impurities, in particular, oxygen, has been studied. The possibility of using the RBS method for analyzing the concentration distribution of doped impurities and the interaction of impurities with each other is presented. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
2402
Issue :
1
Database :
Complementary Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
153597624
Full Text :
https://doi.org/10.1063/5.0071382