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Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon.
- Source :
- AIP Conference Proceedings; 2021, Vol. 2402 Issue 1, p1-6, 6p
- Publication Year :
- 2021
-
Abstract
- This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distribution of iron and other impurities, in particular, oxygen, has been studied. The possibility of using the RBS method for analyzing the concentration distribution of doped impurities and the interaction of impurities with each other is presented. [ABSTRACT FROM AUTHOR]
- Subjects :
- SILICON
IRRADIATION
ATOMS
POSSIBILITY
OXYGEN
Subjects
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 2402
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 153597624
- Full Text :
- https://doi.org/10.1063/5.0071382