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Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Authors :
Huang, Wei‐Chen
Zheng, Hao‐Xuan
Chen, Po‐Hsun
Chang, Ting‐Chang
Tan, Yung‐Fang
Lin, Shih‐Kai
Zhang, Yong‐Ci
Jin, Fu‐Yuan
Wu, Chung‐Wei
Yeh, Yu‐Hsuan
Chou, Sheng‐Yao
Huang, Hui‐Chun
Chen, Yan‐Wen
Sze, Simon M.
Source :
Advanced Electronic Materials; Jun2020, Vol. 6 Issue 6, p1-7, 7p
Publication Year :
2020

Abstract

In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I–V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I–V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
6
Issue :
6
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
143594811
Full Text :
https://doi.org/10.1002/aelm.202000066