Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

MLA

Huang, Wei‐Chen, et al. “Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.” Advanced Electronic Materials, vol. 6, no. 6, June 2020, pp. 1–7. EBSCOhost, https://doi.org/10.1002/aelm.202000066.

APA

Huang, W., Zheng, H., Chen, P., Chang, T., Tan, Y., Lin, S., Zhang, Y., Jin, F., Wu, C., Yeh, Y., Chou, S., Huang, H., Chen, Y., & Sze, S. M. (2020). Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device. Advanced Electronic Materials, 6(6), 1–7. https://doi.org/10.1002/aelm.202000066

Chicago

Huang, Wei‐Chen, Hao‐Xuan Zheng, Po‐Hsun Chen, Ting‐Chang Chang, Yung‐Fang Tan, Shih‐Kai Lin, Yong‐Ci Zhang, et al. 2020. “Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.” Advanced Electronic Materials 6 (6): 1–7. doi:10.1002/aelm.202000066.