Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution.

This paper reports on the thermal impedance measurement of GaN high‐electron‐mobility‐transistors (HEMTs) using frequency‐resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to time‐domain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's thermal impedance with a time‐resolution down to 60 ns and no limitation on the maximum time range with a single measurement technique. Measurements are performed for HEMTs with different gate‐lengths and compared with literature. The experimental results demonstrate the validity and interest of the technique for the thermal impedance extraction of GaN based devices. This paper reports on the thermal impedance measurement of GaN high‐electron‐mobility‐transistors (HEMTs) using frequency‐resolved gate resistance thermometry (f‐GRT). A lock‐in instrument enables the measurement of the thermal impulse response up to the MHz range which translates to an extraction of the HEMT thermal impedance with a time‐resolution down to 60 ns comparable to state‐of‐the‐art optical measurement techniques. [ABSTRACT FROM AUTHOR]