Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution.

MLA

Cutivet, Adrien, et al. “Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 Ns Time Resolution.” Physica Status Solidi. A: Applications & Materials Science, vol. 216, no. 1, Jan. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1002/pssa.201800503.

APA

Cutivet, A., Bouchilaoun, M., Hassan, B., Rodriguez, C., Soltani, A., Boone, F., & Maher, H. (2019). Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution. Physica Status Solidi. A: Applications & Materials Science, 216(1), N.PAG. https://doi.org/10.1002/pssa.201800503

Chicago

Cutivet, Adrien, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, François Boone, and Hassan Maher. 2019. “Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 Ns Time Resolution.” Physica Status Solidi. A: Applications & Materials Science 216 (1): N.PAG. doi:10.1002/pssa.201800503.