TOPOGRAPHIC ANALYSIS OF THE DEFECTS DENSITY DISTRIBUTION IN Ge1-XSiX MONOCRYSTALS.

Authors :: Veliyulin, E.
Source :: Scientific Israel: Technological Advantages; 2018, Vol. 20 Issue 4, p54-56, 3p
Publication Year :: 2018
Abstract: By the local electroreflectance method the topographic analysis of Ge<subscript>1-x</subscript> Si<subscript>x</subscript> monocrystal surface was performed. The influence of the surface orientation on defects density distribution was found. Topographic maps of the defectiveness distribution on the crystal surfaces with (111) and (110) orientations were constructed and visualized. [ABSTRACT FROM AUTHOR]

Subjects :: CRYSTAL defects
SINGLE crystals
SURFACE orientation (Chemistry)
CRYSTAL surfaces
TOPOGRAPHIC maps

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