TOPOGRAPHIC ANALYSIS OF THE DEFECTS DENSITY DISTRIBUTION IN Ge1-XSiX MONOCRYSTALS.

MLA

Veliyulin, E. “TOPOGRAPHIC ANALYSIS OF THE DEFECTS DENSITY DISTRIBUTION IN Ge1-XSiX MONOCRYSTALS.” Scientific Israel: Technological Advantages, vol. 20, no. 4, Oct. 2018, pp. 54–56. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=133763258&authtype=sso&custid=ns315887.

APA

Veliyulin, E. (2018). TOPOGRAPHIC ANALYSIS OF THE DEFECTS DENSITY DISTRIBUTION IN Ge1-XSiX MONOCRYSTALS. Scientific Israel: Technological Advantages, 20(4), 54–56.

Chicago

Veliyulin, E. 2018. “TOPOGRAPHIC ANALYSIS OF THE DEFECTS DENSITY DISTRIBUTION IN Ge1-XSiX MONOCRYSTALS.” Scientific Israel: Technological Advantages 20 (4): 54–56. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=133763258&authtype=sso&custid=ns315887.