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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP.
- Source :
- Journal of Applied Physics; 4/1/1997, Vol. 81 Issue 7, p3143, 8p, 16 Graphs
- Publication Year :
- 1997
-
Abstract
- Examines the deep levels present in indium phosphide junctions fabricated through ion implantation and rapid thermal annealing. Sample description; Deep level transient spectroscopy; Capacitance-voltage transient technique; Damage concentration profile; Emission coefficients.
- Subjects :
- INDIUM phosphide
ION implantation
RAPID thermal processing
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 81
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 129824
- Full Text :
- https://doi.org/10.1063/1.364348