Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP.

MLA

Quintanilla, L., et al. “Deep Levels in P+-n Junctions Fabricated by Rapid Thermal Annealing of Mg or Mg/P Implanted InP.” Journal of Applied Physics, vol. 81, no. 7, Apr. 1997, p. 3143. EBSCOhost, https://doi.org/10.1063/1.364348.

APA

Quintanilla, L., Dueñas, S., Castán, E., Pinacho, R., Barbolla, J., Martín, J. M., & González-Díaz, G. (1997). Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP. Journal of Applied Physics, 81(7), 3143. https://doi.org/10.1063/1.364348

Chicago

Quintanilla, L., S. Dueñas, E. Castán, R. Pinacho, J. Barbolla, J. M. Martín, and G. González-Díaz. 1997. “Deep Levels in P+-n Junctions Fabricated by Rapid Thermal Annealing of Mg or Mg/P Implanted InP.” Journal of Applied Physics 81 (7): 3143. doi:10.1063/1.364348.