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Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization.
- Source :
- IEEE Transactions on Electron Devices; Mar2018, Vol. 65 Issue 3, p1079-1086, 8p
- Publication Year :
- 2018
-
Abstract
- Impact ionization has been seen to effect pinchoff in wafer-bonded aperture vertical electron transistors (BAVETs) comprising an InGaAs channel wafer-bonded to a III-nitride (III-N) drift region. The InGaAs-III-N junction is referred to as the wafer-bonded interface (WBI). Field plating can work well to manage the peak field and related impact ionization; however, it comes with a tradeoff of increased on resistance. In this paper, another control knob to breakdown is explored in the critical field (ξ<subscript>CRIT_IMPCT</subscript>) of a BAVET. Investigation focuses on the characteristics of devices that differ in their InAlAs doping profile, namely p-type, unintentional, or a combination of both. These devices are tested for the role of field plate, built-in voltage, and trap behavior on pinchoff. It is shown that the change of doping causes a dramatic change to the trap activity at WBI. These traps ionize and determine ξ<subscript>CRIT_IMPCT</subscript> as ionization of traps that leads to an early onset of impact ionization in the channel, which weakens pinchoff in a BAVET. Passivating traps is proposed to be a method to improving pinchoff. Trap passivation of WBI is demonstrated if InAlAs is doped p-type rather than unintentionally. A consequent enhancement in pinchoff and breakdown voltage of a BAVET is also reported. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 128703285
- Full Text :
- https://doi.org/10.1109/TED.2018.2797046