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Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
- Source :
- Physica Status Solidi. A: Applications & Materials Science; Aug2017, Vol. 214 Issue 8, pn/a-N.PAG, 5p
- Publication Year :
- 2017
-
Abstract
- In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 214
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 124623981
- Full Text :
- https://doi.org/10.1002/pssa.201600829