Cite
Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
MLA
Tanaka, Atsushi, et al. “Facet Dependence of Leakage Current and Carrier Concentration in M-Plane GaN Schottky Barrier Diode Fabricated with MOVPE.” Physica Status Solidi. A: Applications & Materials Science, vol. 214, no. 8, Aug. 2017, p. n/a-N.PAG. EBSCOhost, https://doi.org/10.1002/pssa.201600829.
APA
Tanaka, A., Barry, O., Nagamatsu, K., Matsushita, J., Deki, M., Ando, Y., Kushimoto, M., Nitta, S., Honda, Y., & Amano, H. (2017). Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE. Physica Status Solidi. A: Applications & Materials Science, 214(8), n/a-N.PAG. https://doi.org/10.1002/pssa.201600829
Chicago
Tanaka, Atsushi, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano. 2017. “Facet Dependence of Leakage Current and Carrier Concentration in M-Plane GaN Schottky Barrier Diode Fabricated with MOVPE.” Physica Status Solidi. A: Applications & Materials Science 214 (8): n/a-N.PAG. doi:10.1002/pssa.201600829.