Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric.

Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La₂O₃/SiO₂ AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La₂O₃-based (La₂O₃/HfO₂, La₂O₃/CeO₂ and single La₂O₃) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La₂O₃/SiO₂ MOS-HEMT were demonstrated. [ABSTRACT FROM AUTHOR]