Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric.

MLA

Ching-Hsiang Hsu, et al. “Improved Linearity and Reliability in GaN Metal–oxide–semiconductor High-Electron-Mobility Transistors Using Nanolaminate La2O3/SiO2 Gate Dielectric.” Japanese Journal of Applied Physics, vol. 55, no. 4s, Apr. 2016, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.55.04EG04.

APA

Ching-Hsiang Hsu, Wang-Cheng Shih, Yueh-Chin Lin, Heng-Tung Hsu, Hisang-Hua Hsu, Yu-Xiang Huang, Tai-Wei Lin, Chia-Hsun Wu, Wen-Hao Wu, Jer-Shen Maa, Hiroshi Iwai, Kuniyuki Kakushima, & Edward Yi Chang. (2016). Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric. Japanese Journal of Applied Physics, 55(4s), 1. https://doi.org/10.7567/JJAP.55.04EG04

Chicago

Ching-Hsiang Hsu, Wang-Cheng Shih, Yueh-Chin Lin, Heng-Tung Hsu, Hisang-Hua Hsu, Yu-Xiang Huang, Tai-Wei Lin, et al. 2016. “Improved Linearity and Reliability in GaN Metal–oxide–semiconductor High-Electron-Mobility Transistors Using Nanolaminate La2O3/SiO2 Gate Dielectric.” Japanese Journal of Applied Physics 55 (4s): 1. doi:10.7567/JJAP.55.04EG04.