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Tunable daughter molds from a single Si master grating mold.

Authors :
Shreya Kundu
Su Hui Lim
Ganesan, Ramakrishnan
Hussain, Hazrat
Saifullah, Mohammad S. M.
Hyunsoo Yang
Ghim Wei Ho
Bhatia, Charanjit S.
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2014, Vol. 32 Issue 5, p1-6, 6p
Publication Year :
2014

Abstract

After the cost of ownership of tool, the next significant cost involved in nanoimprint lithography is that of mold fabrication. The cost of mold fabrication is proportional to the area of pattern and follows an inverse relationship with the pattern resolution. In this work, the authors demonstrate proof-of-concept fabrication of Si and SiO<subscript>2</subscript> grating molds of variable feature sizes, spacings, densities, and aspect ratios that can be generated from a single Si master mold of <subscript>2</subscript>μm line and space features. This process utilizes "SiO<subscript>2</subscript> resin," which can be imprinted via in situ thermal free radical polymerization. Heat-treatment of the patterned resin resulted in loss of organics, formation of SiO<subscript>x</subscript> and gave rise to known feature size reduction (~65%). After the pattern transfer using SiO<subscript>x</subscript> as the etch mask, a Si daughter mold containing 0.7μm wide gratings with 3.3μm spacing was generated. The process of imprinting and heat-treatment was repeated using the daughter mold, which regenerated a mold that approximates the master mold feature profile. Our technique demonstrates that submicron-sized features can be achieved from Si molds containing micron-sized features and vice versa. Such flexibility may lead to substantial reduction in the cost of mold fabrication. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
32
Issue :
5
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
101866774
Full Text :
https://doi.org/10.1116/1.4892063